Infineon Technologies AG Single FETs, MOSFETs SPP02N60C3HKSA1

N-Channel 650V 1.8A (Tc) 25W (Tc) Through Hole PG-TO220-3-1

MOSFET N-CH 650V 1.8A TO220-3 Product overview: SPP02N60C3HKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 1.8A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 1.8A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPP02N60C3HKSA1 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1278327-SPP02N60C3HKSA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Power Dissipation (Max): 25W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SPP02N60C3X,SPP02N60C3,SP000013523,SPP02N60C3IN,SPP02N60C3XK,SPP02N60C3INR,SPP02N60C3IN,SPP02N60C3XTIN,SPP02N60C3XTIN
Base Product Number: SPP02N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V