Infineon Technologies AG Single FETs, MOSFETs SPN02N60S5

Description
N-Channel 600V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
  • Single FETs, MOSFETs - SPN02N60S5-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPN02N60S5 - 1101610-SPN02N60S5 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPN02N60S5 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
N-Channel 600V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Request a Quote Datasheet

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Single FETs, MOSFETs - SPN02N60S5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPN02N60S5-ND
Single FETs, MOSFETs SPN02N60S5-ND
N-Channel 600V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

N-Channel 600V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPN02N60S5 - 1101610-SPN02N60S5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPN02N60S5
1101610-SPN02N60S5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPN02N60S5 1101610-SPN02N60S5
Manufacturer: Infineon Technologies Win Source Part Number: 1101610-SPN02N60S5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 400mA (Ta) Gate-Source Threshold Voltage: 5.5V @ 80μA Max Gate Charge: 7.4nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 1.1A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1101610-SPN02N60S5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 400mA (Ta)
Gate-Source Threshold Voltage: 5.5V @ 80μA
Max Gate Charge: 7.4nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 1.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPN02N60S5 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPN02N60S5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPN02N60S5
MOSFET N-CH 600V 400MA SOT223-4

MOSFET N-CH 600V 400MA SOT223-4

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SPN02N60S5-ND 1101610-SPN02N60S5 SPN02N60S5
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPN02N60S5 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-261-4, TO-261AA SOT3; PG-SOT223-4 TO-261-4, TO-261AA
V(BR)DSS 600 volts
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