Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SPN02N60C3 E6433

Description
Win Source Part Number: 1142317-SPN02N60C3 E6433 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tape & Reel (TR) Standard Package: 4,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 80µA Power Dissipation (Max): 1.8W (Ta) Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4 Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SPN02N60C3E6433; ECCN: EAR99 Fake Threat In the Open Market: 67 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SPN02N60C3E6433,SPN0 2N60C3 E6433-ND,SPN02N60C3E 6433XT,SP000101883 Base Product Number: SPN02N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1142317-SPN02N60C3 E6433 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tape & Reel (TR) Standard Package: 4,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 80µA Power Dissipation (Max): 1.8W (Ta) Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4 Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SPN02N60C3E6433; ECCN: EAR99 Fake Threat In the Open Market: 67 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SPN02N60C3E6433,SPN0 2N60C3 E6433-ND,SPN02N60C3E 6433XT,SP000101883 Base Product Number: SPN02N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

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Product
Description
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1142317-SPN02N60C3 E6433 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1142317-SPN02N60C3 E6433
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1142317-SPN02N60C3 E6433
Win Source Part Number: 1142317-SPN02N60C3 E6433 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tape & Reel (TR) Standard Package: 4,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 80µA Power Dissipation (Max): 1.8W (Ta) Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4 Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SPN02N60C3E6433; ECCN: EAR99 Fake Threat In the Open Market: 67 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SPN02N60C3E6433,SPN0 2N60C3 E6433-ND,SPN02N60C3E 6433XT,SP000101883 Base Product Number: SPN02N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1142317-SPN02N60C3 E6433
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Package: Tape & Reel (TR)
Standard Package: 4,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Power Dissipation (Max): 1.8W (Ta)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SPN02N60C3E6433;
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SPN02N60C3E6433,SPN02N60C3 E6433-ND,SPN02N60C3E6433XT,SP000101883
Base Product Number: SPN02N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Singapore
N-Channel SMD 650V 400MA MOSFET Transistor
285-SPN02N60C3 E6433
N-Channel SMD 650V 400MA MOSFET Transistor 285-SPN02N60C3 E6433
MOSFET N-CH 650V 400MA SOT223-4 / N-Channel 650 V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4 Product overview: SPN02N60C3 E6433 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 650V, 400MA, 650 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 650V, 400MA, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SPN02N60C3 E6433 can be used for catalog matching and distributor lookup.

MOSFET N-CH 650V 400MA SOT223-4 / N-Channel 650 V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4 Product overview: SPN02N60C3 E6433 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 650V, 400MA, 650 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 650V, 400MA, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SPN02N60C3 E6433 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1142317-SPN02N60C3 E6433 285-SPN02N60C3 E6433
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single N-Channel SMD 650V 400MA MOSFET Transistor
Polarity N-Channel
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