Infineon Technologies AG Single FETs, MOSFETs SPN01N60C3

Description
N-Channel 650V 300mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
  • Single FETs, MOSFETs - SPN01N60C3-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPN01N60C3 - 065945-SPN01N60C3 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPN01N60C3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
N-Channel 650V 300mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Request a Quote Datasheet

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Product
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Single FETs, MOSFETs - SPN01N60C3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPN01N60C3-ND
Single FETs, MOSFETs SPN01N60C3-ND
N-Channel 650V 300mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

N-Channel 650V 300mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPN01N60C3 - 065945-SPN01N60C3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPN01N60C3
065945-SPN01N60C3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPN01N60C3 065945-SPN01N60C3
Manufacturer: Infineon Technologies Win Source Part Number: 065945-SPN01N60C3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 300mA (Ta) Gate-Source Threshold Voltage: 3.7V @ 250μA Max Gate Charge: 5nC @ 10V Max Input Capacitance: 100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 065945-SPN01N60C3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 300mA (Ta)
Gate-Source Threshold Voltage: 3.7V @ 250μA
Max Gate Charge: 5nC @ 10V
Max Input Capacitance: 100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPN01N60C3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPN01N60C3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPN01N60C3
MOSFET N-CH 650V 300MA SOT223-4

MOSFET N-CH 650V 300MA SOT223-4

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SPN01N60C3-ND 065945-SPN01N60C3 SPN01N60C3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPN01N60C3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-261-4, TO-261AA SOT3; PG-SOT223-4 TO-261-4, TO-261AA
V(BR)DSS 650 volts
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