Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SPI80N06S-08

Description
Win Source Part Number: 1278267-SPI80N06S-08 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SIPMOS® Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 240µA Power Dissipation (Max): 300W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: PG-TO262-3-1 Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000054055,SPI80N06 S08,SP000084809 Base Product Number: SPI80N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278267-SPI80N06S-08 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SPI80N06S-08-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPI80N06S-08 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1278267-SPI80N06S-08 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SIPMOS® Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 240µA Power Dissipation (Max): 300W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: PG-TO262-3-1 Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000054055,SPI80N06 S08,SP000084809 Base Product Number: SPI80N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278267-SPI80N06S-08 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278267-SPI80N06S-08
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278267-SPI80N06S-08
Win Source Part Number: 1278267-SPI80N06S-08 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SIPMOS® Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 240µA Power Dissipation (Max): 300W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: PG-TO262-3-1 Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000054055,SPI80N06 S08,SP000084809 Base Product Number: SPI80N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1278267-SPI80N06S-08
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: SIPMOS®
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 300W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3-1
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000054055,SPI80N06S08,SP000084809
Base Product Number: SPI80N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SPI80N06S-08-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPI80N06S-08-ND
Single FETs, MOSFETs SPI80N06S-08-ND
N-Channel 55V 80A (Tc) 300W (Tc) Through Hole PG-TO262-3-1

N-Channel 55V 80A (Tc) 300W (Tc) Through Hole PG-TO262-3-1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPI80N06S-08 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPI80N06S-08
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPI80N06S-08
MOSFET N-CH 55V 80A TO262-3

MOSFET N-CH 55V 80A TO262-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors
Product Number 1278267-SPI80N06S-08 SPI80N06S-08-ND SPI80N06S-08
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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