Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPI80N04S2-04 SPI80N04S2-04

Manufacturer: Infineon Technologies
Win Source Part Number: 1257926-SPI80N04S2-04
Series: OptiMOS
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete(EOL)
Family Name: SPI80N04S2-04
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.infineon.com
Manufacturer Package: PG-TO262-3-1
Channel Type Type: N
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6980pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.7 mOhm @ 80A, 10V
Alternative Parts (Cross-Reference): BUK9E8R5-40E; BUK9E8R5-40E,127; BUK9E4R4-40B,127;
Introduction Date: May 24, 2004
ECCN: EAR99
Estimated EOL Date: Obsolete
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

OptiMOS Power-Transistor Product overview: SPI80N04S2-04 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SPI80N04S2-04 can be used for catalog matching and distributor lookup.