Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SPI47N10

Description
Win Source Part Number: 1278268-SPI47N10 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SIPMOS® Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Power Dissipation (Max): 175W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: PG-TO262-3-1 Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000013951 Base Product Number: SPI47N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278268-SPI47N10 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SPI47N10-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPI47N10 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1278268-SPI47N10 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SIPMOS® Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Power Dissipation (Max): 175W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: PG-TO262-3-1 Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000013951 Base Product Number: SPI47N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

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Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278268-SPI47N10 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278268-SPI47N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278268-SPI47N10
Win Source Part Number: 1278268-SPI47N10 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SIPMOS® Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Power Dissipation (Max): 175W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: PG-TO262-3-1 Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000013951 Base Product Number: SPI47N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1278268-SPI47N10
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: SIPMOS®
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 33A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Power Dissipation (Max): 175W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3-1
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000013951
Base Product Number: SPI47N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SPI47N10-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPI47N10-ND
Single FETs, MOSFETs SPI47N10-ND
N-Channel 100V 47A (Tc) 175W (Tc) Through Hole PG-TO262-3-1

N-Channel 100V 47A (Tc) 175W (Tc) Through Hole PG-TO262-3-1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPI47N10 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPI47N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPI47N10
MOSFET N-CH 100V 47A TO262-3

MOSFET N-CH 100V 47A TO262-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors
Product Number 1278268-SPI47N10 SPI47N10-ND SPI47N10
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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