Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPI08N80C3 SPI08N80C3

Manufacturer: Infineon Technologies
Win Source Part Number: 065936-SPI08N80C3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO262-3-1
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 470μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1100pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 650 mOhm @ 5.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

N-Channel 800V 8A (Tc) 104W (Tc) Through Hole PG-TO262-3

MOSFET N-CH 800V 8A TO262-3 Product overview: SPI08N80C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPI08N80C3 can be used for catalog matching and distributor lookup.