Infineon Technologies AG 650V 7.3A MOSFET Transistor SPI07N65C3HKSA1

MOSFET N-CH 650V 7.3A TO262-3 Product overview: SPI07N65C3HKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPI07N65C3HKSA1 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1278323-SPI07N65C3HKSA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Power Dissipation (Max): 83W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3-1
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000014632,SPI07N65C3XK,SPI07N65C3IN,SPI07N65C3IN,SPI07N65C3X,SPI07N65C3,SPI07N65C3,SP000680982
Base Product Number: SPI07N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

N-Channel 650V 7.3A (Tc) 83W (Tc) Through Hole PG-TO262-3-1