MOSFET P-CH 30V 50A TO252-5 Product overview: SPD50P03LGBTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 50A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 50A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD50P03LGBTMA1 can be used for catalog matching and distributor lookup.
P-Channel 30V 50A (Tc) 150W (Tc) Surface Mount PG-TO252-5
P-Channel 30V 50A (Tc) 150W (Tc) Surface Mount PG-TO252-5
P-Channel 30V 50A (Tc) 150W (Tc) Surface Mount PG-TO252-5
MOSFET P-CH 30V 50A TO252-5
Win Source Part Number: 965356-SPD50P03LGBTM
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 150W (Tc)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: PG-TO252-5
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): FDD3672; FDD6635; FDD6680AS; IPD127N06LGBTMA1; IRFR2607ZPBF; IPD034N06N3GATMA1SP0
ECCN: EAR99
Fake Threat In the Open Market: 55 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SPD50P03LGINDKR-ND,I
Base Product Number: SPD50P03
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET P-CH 30V 50A TO252-5
MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P
MOSFET, P-CH, 30V, 50A, 175DEG C, 150W; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SPD50P03LGBTMA1 | SPD50P03LGBTMA1DKR-ND | SPD50P03LGBTMA1 | 965356-SPD50P03LGBTMA1 | SPD50P03LGBTMA1 | SPD50P03LGBTMA1 | 85X7428 |
| Product Name | 30V 50A TO252 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 30V, 50A, 175Deg C, 150W; Channel Type Infineon |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| Transconductance | 0.0470 kS | ||||||
| PD | 150 milliwatts | 150000 milliwatts | 150000 milliwatts |