Win Source Part Number: 965356-SPD50P03LGBTM
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 150W (Tc)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: PG-TO252-5
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): FDD3672; FDD6635; FDD6680AS; IPD127N06LGBTMA1; IRFR2607ZPBF; IPD034N06N3GATMA1SP0
ECCN: EAR99
Fake Threat In the Open Market: 55 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SPD50P03LGINDKR-ND,I
Base Product Number: SPD50P03
Drive Voltage (Max Rds On, Min Rds On): 10V
P-Channel 30V 50A (Tc) 150W (Tc) Surface Mount PG-TO252-5
P-Channel 30V 50A (Tc) 150W (Tc) Surface Mount PG-TO252-5
P-Channel 30V 50A (Tc) 150W (Tc) Surface Mount PG-TO252-5
MOSFET P-CH 30V 50A TO252-5
MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P
MOSFET P-CH 30V 50A TO252-5
MOSFET, P-CH, 30V, 50A, 175DEG C, 150W; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 965356-SPD50P03LGBTMA1 | SPD50P03LGBTMA1DKR-ND | SPD50P03LGBTMA1 | SPD50P03LGBTMA1 | SPD50P03LGBTMA1 | 85X7428 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 30V, 50A, 175Deg C, 150W; Channel Type Infineon |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | |||
| PD | 150000 milliwatts | 150000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | SOT3 | TO-252 (DPAK); TO-252-5, DPAK (4 Leads + Tab), TO-252AD | TO-252 (DPAK); TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252 (DPAK); TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-3 | |
| Transistor Grade / Operating Range | Automotive |