Infineon Technologies AG Single FETs, MOSFETs SPD35N10

Description
N-Channel 100V 35A (Tc) 150W (Tc) Surface Mount PG-TO252-3
Request a Quote Datasheet
Description
N-Channel 100V 35A (Tc) 150W (Tc) Surface Mount PG-TO252-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SPD35N10INTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPD35N10INTR-ND
Single FETs, MOSFETs SPD35N10INTR-ND
N-Channel 100V 35A (Tc) 150W (Tc) Surface Mount PG-TO252-3

N-Channel 100V 35A (Tc) 150W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD35N10 - 1101555-SPD35N10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD35N10
1101555-SPD35N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD35N10 1101555-SPD35N10
Manufacturer: Infineon Technologies Win Source Part Number: 1101555-SPD35N10 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 35A (Tc) Max Gate Charge: 65nC @ 10V Max Input Capacitance: 1570pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 44 mOhm @ 26.4A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Application Field: Used in Power Management

Manufacturer: Infineon Technologies
Win Source Part Number: 1101555-SPD35N10
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 35A (Tc)
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 1570pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 44 mOhm @ 26.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management

Buy Now Datasheet
Singapore
100V 35A TO252 MOSFET Transistor
278-SPD35N10
100V 35A TO252 MOSFET Transistor 278-SPD35N10
MOSFET N-CH 100V 35A TO252-3 Product overview: SPD35N10 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 35A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 35A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD35N10 can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 35A TO252-3 Product overview: SPD35N10 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 35A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 35A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD35N10 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPD35N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPD35N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPD35N10
MOSFET N-CH 100V 35A TO252-3

MOSFET N-CH 100V 35A TO252-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SPD35N10INTR-ND 1101555-SPD35N10 278-SPD35N10 SPD35N10
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD35N10 100V 35A TO252 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); PG-TO252-3 Tape & Reel (TR) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 100 volts
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