Infineon Technologies AG Single FETs, MOSFETs SPD30N06S2L-23

Description
N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11
Request a Quote Datasheet
Description
N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SPD30N06S2L-23-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPD30N06S2L-23-ND
Single FETs, MOSFETs SPD30N06S2L-23-ND
N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11

N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11

Buy Now Datasheet
Singapore
55V 30A TO252 MOSFET Transistor
278-SPD30N06S2L-23
55V 30A TO252 MOSFET Transistor 278-SPD30N06S2L-23
MOSFET N-CH 55V 30A TO252-3 Product overview: SPD30N06S2L-23 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 30A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 30A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD30N06S2L-23 can be used for catalog matching and distributor lookup.

MOSFET N-CH 55V 30A TO252-3 Product overview: SPD30N06S2L-23 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 30A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 30A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD30N06S2L-23 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD30N06S2L-23 - 042830-SPD30N06S2L-23 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD30N06S2L-23
042830-SPD30N06S2L-23
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD30N06S2L-23 042830-SPD30N06S2L-23
Manufacturer: Infineon Technologies Win Source Part Number: 042830-SPD30N06S2L-2 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: P-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 2V @ 50μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1390pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 23 mOhm @ 22A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Communications & Networking, Computers & Computer Peripherals

Manufacturer: Infineon Technologies
Win Source Part Number: 042830-SPD30N06S2L-23
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: P-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 2V @ 50μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1390pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 23 mOhm @ 22A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Communications & Networking, Computers & Computer Peripherals

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPD30N06S2L-23 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPD30N06S2L-23
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPD30N06S2L-23
MOSFET N-CH 55V 30A TO252-3

MOSFET N-CH 55V 30A TO252-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SPD30N06S2L-23-ND 278-SPD30N06S2L-23 042830-SPD30N06S2L-23 SPD30N06S2L-23
Product Name Single FETs, MOSFETs 55V 30A TO252 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD30N06S2L-23 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) SOT3; TO-252 (DPAK); P-TO252-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
PD 100000 milliwatts 100000 milliwatts
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