Manufacturer: Infineon Technologies
Win Source Part Number: 897056-SPD18P06PGBTM
Series: SIPMOS®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: P-Channel 60 V 18.6A (Tc) 80W (Tc) Surface Mount PG-TO252-3
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: Reel - TR
Mounting: Surface Mount
Family Name: SPD18P06
Categories: Discrete Semiconductor Products
Case / Package: PG-TO252-3
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SPD18P06P G, SPD18P06P G-ND, SPD18P06P GTR-ND, SPD18P06P GCT-ND, SPD18P06P GDKR-ND, SPD18P06PGBTMA1DKR, SPD18P06P GDKR, SPD18P06PGBTMA1CT, SPD18P06P GCT, SPD18P06PG, SPD18P06PGBTMA1TR, SP000443926
MOSFET P-CH 60V 18.6A TO252-3 Product overview: SPD18P06PGBTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 18.6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 18.6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD18P06PGBTMA1 can be used for catalog matching and distributor lookup.
P-Channel 60V 18.6A (Tc) 80W (Tc) Surface Mount PG-TO252-3
P-Channel 60V 18.6A (Tc) 80W (Tc) Surface Mount PG-TO252-3
P-Channel 60V 18.6A (Tc) 80W (Tc) Surface Mount PG-TO252-3
MOSFET P-Ch -60V -18.6A DPAK-2
MOSFET P-CH 60V 18.6A TO252-3
MOSFET P-CH 60V 18.6A TO252-3
MOSFET, P CHANNEL, 60V, 18.6A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | DigiKey | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 897056-SPD18P06PGBTMA1 | 278-SPD18P06PGBTMA1 | 2732831 | SPD18P06PGBTMA1CT-ND | SPD18P06PGBTMA1 | SPD18P06PGBTMA1 | SPD18P06PGBTMA1 | 47W3761 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD18P06PGBTMA1 | 60V 18.6A TO252 MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, 60V, 18.6A, To-252; Channel Type Infineon |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | SOT3; PG-TO252-3 | Tape & Reel (TR) | PG-TO252-3 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts |
