Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD08N50C3 SPD08N50C3

Description
Manufacturer: Infineon Technologies Win Source Part Number: 042826-SPD08N50C3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 83W (Tc) Family Name: SPD08N50C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3-1 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 7.6A (Tc) Gate-Source Threshold Voltage: 3.9V @ 350μA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 750pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 4.6A, 10V Alternative Parts (Cross-Reference): STD9NM50N; STD7NM50N; TSM5NS50CP RO; STD10NM50N; Introduction Date: June 27, 2003 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 042826-SPD08N50C3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 83W (Tc) Family Name: SPD08N50C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3-1 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 7.6A (Tc) Gate-Source Threshold Voltage: 3.9V @ 350μA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 750pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 4.6A, 10V Alternative Parts (Cross-Reference): STD9NM50N; STD7NM50N; TSM5NS50CP RO; STD10NM50N; Introduction Date: June 27, 2003 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD08N50C3 - 042826-SPD08N50C3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD08N50C3
042826-SPD08N50C3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD08N50C3 042826-SPD08N50C3
Manufacturer: Infineon Technologies Win Source Part Number: 042826-SPD08N50C3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 83W (Tc) Family Name: SPD08N50C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3-1 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 7.6A (Tc) Gate-Source Threshold Voltage: 3.9V @ 350μA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 750pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 4.6A, 10V Alternative Parts (Cross-Reference): STD9NM50N; STD7NM50N; TSM5NS50CP RO; STD10NM50N; Introduction Date: June 27, 2003 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 042826-SPD08N50C3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Family Name: SPD08N50C3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3-1
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 7.6A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 350μA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 750pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 4.6A, 10V
Alternative Parts (Cross-Reference): STD9NM50N; STD7NM50N; TSM5NS50CP RO; STD10NM50N;
Introduction Date: June 27, 2003
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
500V 7.6A DPAK MOSFET Transistor
285-SPD08N50C3
500V 7.6A DPAK MOSFET Transistor 285-SPD08N50C3
Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 500V 7.6A DPAK Product overview: SPD08N50C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 7.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 7.6A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SPD08N50C3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 500V 7.6A DPAK Product overview: SPD08N50C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 7.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 7.6A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SPD08N50C3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 042826-SPD08N50C3 285-SPD08N50C3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD08N50C3 500V 7.6A DPAK MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts
PD 83000 milliwatts 83000 milliwatts
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