Infineon Technologies AG 650V 7.3A TO252 MOSFET Transistor SPD07N60C3BTMA1

MOSFET N-CH 650V 7.3A TO252-3 Product overview: SPD07N60C3BTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD07N60C3BTMA1 can be used for catalog matching and distributor lookup.

N-Channel 650V 7.3A (Tc) 83W (Tc) Surface Mount PG-TO252-3-11

Manufacturer: Infineon Technologies
Win Source Part Number: 111256-SPD07N60C3BTMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 7.3A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 350μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 790pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 4.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Communications & Networking, Consumer Electronics, Power Management