LOW POWER_LEGACY Product overview: SPD07N60C3ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Low-Power, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD07N60C3ATMA1 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1101545-SPD07N60C3AT
Categories: Discrete Semiconductor Products
Status: Active
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Automotive, Computers & Computer Peripherals, Communications & Networking, Consumer Electronics, Lighting, Sensing & Instrumentation, Industrial
N-Channel 600V 7.3A (Tc) 83W (Tc) Surface Mount PG-TO252-3-313
N-Channel 600V 7.3A (Tc) 83W (Tc) Surface Mount PG-TO252-3-313
N-Channel 600V 7.3A (Tc) 83W (Tc) Surface Mount PG-TO252-3-313
MOSFET, N CHANNEL, 650V, 7.3A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
LOW POWER_LEGACY
POWER FIELD-EFFECT TRANSISTOR, 7.3A I(D), 600V, 0.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA D-PACK (CUT TAPE). FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SPD07N60C3ATMA1 | 1101545-SPD07N60C3ATMA1 | 448-SPD07N60C3ATMA1CT-ND | 33P8209 | SPD07N60C3ATMA1 | SPD07N60C3ATMA1 | SPD07N60C3ATMA1 | 108047078 |
| Product Name | Low-Power MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD07N60C3ATMA1 | Single FETs, MOSFETs | Mosfet, N Channel, 650V, 7.3A, To-252; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Transistor |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 600 volts | 600 volts | ||||||
| PD | 83 milliwatts | 83000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
