Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD04N80C3ATMA1 SPD04N80C3ATMA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 109445-SPD04N80C3ATM A1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 63W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 3.9V @ 240μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 570pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.3 Ohm @ 2.5A, 10V Alternative Parts (Cross-Reference): FCD1300N80Z; SPD04N80C3ZT; SPD04N80C3XT; SPD04N80C3ATMA1; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 109445-SPD04N80C3ATM A1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 63W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 3.9V @ 240μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 570pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.3 Ohm @ 2.5A, 10V Alternative Parts (Cross-Reference): FCD1300N80Z; SPD04N80C3ZT; SPD04N80C3XT; SPD04N80C3ATMA1; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD04N80C3ATMA1 - 109445-SPD04N80C3ATMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD04N80C3ATMA1
109445-SPD04N80C3ATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD04N80C3ATMA1 109445-SPD04N80C3ATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 109445-SPD04N80C3ATM A1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 63W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 3.9V @ 240μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 570pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.3 Ohm @ 2.5A, 10V Alternative Parts (Cross-Reference): FCD1300N80Z; SPD04N80C3ZT; SPD04N80C3XT; SPD04N80C3ATMA1; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 109445-SPD04N80C3ATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 63W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 240μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 570pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.3 Ohm @ 2.5A, 10V
Alternative Parts (Cross-Reference): FCD1300N80Z; SPD04N80C3ZT; SPD04N80C3XT; SPD04N80C3ATMA1;
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SPD04N80C3ATMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SPD04N80C3ATMA1
Single FETs, MOSFETs SPD04N80C3ATMA1
MOSFET N-CH 800V 4A TO252-3

MOSFET N-CH 800V 4A TO252-3

Supplier's Site Datasheet
Single FETs, MOSFETs - SPD04N80C3ATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPD04N80C3ATMA1CT-ND
Single FETs, MOSFETs SPD04N80C3ATMA1CT-ND
N-Channel 800V 4A (Tc) 63W (Tc) Surface Mount PG-TO252-3

N-Channel 800V 4A (Tc) 63W (Tc) Surface Mount PG-TO252-3

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Single FETs, MOSFETs - SPD04N80C3ATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPD04N80C3ATMA1DKR-ND
Single FETs, MOSFETs SPD04N80C3ATMA1DKR-ND
N-Channel 800V 4A (Tc) 63W (Tc) Surface Mount PG-TO252-3

N-Channel 800V 4A (Tc) 63W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
Single FETs, MOSFETs - SPD04N80C3ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPD04N80C3ATMA1TR-ND
Single FETs, MOSFETs SPD04N80C3ATMA1TR-ND
N-Channel 800V 4A (Tc) 63W (Tc) Surface Mount PG-TO252-3

N-Channel 800V 4A (Tc) 63W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
MOSFETs - 2172644P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2172644P
MOSFETs 2172644P
Infineon MOSFET SPD04N80C3ATMA1

Infineon MOSFET SPD04N80C3ATMA1

Supplier's Site
MOSFETs - 2172643 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2172643
MOSFETs 2172643
Infineon MOSFET SPD04N80C3ATMA1

Infineon MOSFET SPD04N80C3ATMA1

Supplier's Site
MOSFETs - 2172644 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2172644
MOSFETs 2172644
Infineon MOSFET SPD04N80C3ATMA1

Infineon MOSFET SPD04N80C3ATMA1

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPD04N80C3ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPD04N80C3ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPD04N80C3ATMA1
MOSFET N-CH 800V 4A TO252-3

MOSFET N-CH 800V 4A TO252-3

Supplier's Site
Mosfet, N Channel, 800V, 4A, To-252; Channel Type Infineon - 33P8206 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 800V, 4A, To-252; Channel Type Infineon
33P8206
Mosfet, N Channel, 800V, 4A, To-252; Channel Type Infineon 33P8206
MOSFET, N CHANNEL, 800V, 4A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N CHANNEL, 800V, 4A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET LOW POWER_LEGACY

MOSFET LOW POWER_LEGACY

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey RS Components, Ltd. RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 109445-SPD04N80C3ATMA1 SPD04N80C3ATMA1 SPD04N80C3ATMA1CT-ND 2172644P 2172643 SPD04N80C3ATMA1 33P8206 SPD04N80C3ATMA1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD04N80C3ATMA1 Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 800V, 4A, To-252; Channel Type Infineon MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 800 volts 800 volts
PD 63000 milliwatts 63000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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