MOSFET N-CH 800V 4A TO252-3
MOSFET N-CH 800V 4A TO252-3 Product overview: SPD04N80C3ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 4A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 4A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD04N80C3ATMA1 can be used for catalog matching and distributor lookup.
N-Channel 800V 4A (Tc) 63W (Tc) Surface Mount PG-TO252-3
N-Channel 800V 4A (Tc) 63W (Tc) Surface Mount PG-TO252-3
N-Channel 800V 4A (Tc) 63W (Tc) Surface Mount PG-TO252-3
Manufacturer: Infineon Technologies
Win Source Part Number: 109445-SPD04N80C3ATM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 63W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 240μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 570pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.3 Ohm @ 2.5A, 10V
Alternative Parts (Cross-Reference): FCD1300N80Z; SPD04N80C3ZT; SPD04N80C3XT; SPD04N80C3ATMA1;
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
MOSFET, N CHANNEL, 800V, 4A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 800V 4A TO252-3
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SPD04N80C3ATMA1 | 278-SPD04N80C3ATMA1 | SPD04N80C3ATMA1CT-ND | 2172644P | 2172643 | 109445-SPD04N80C3ATMA1 | 33P8206 | SPD04N80C3ATMA1 | SPD04N80C3ATMA1 |
| Product Name | Single FETs, MOSFETs | 800V 4A TO252 MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD04N80C3ATMA1 | Mosfet, N Channel, 800V, 4A, To-252; Channel Type Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 800 volts | 800 volts | 800 volts | ||||||
| IDSS | 4000 milliamps | 4000 milliamps | |||||||
| PD | 63000 milliwatts | 63 milliwatts | 63000 milliwatts |
