Infineon Technologies AG 500V 4.5A TO252 MOSFET Transistor SPD04N50C3ATMA1

MOSFET N-CH 500V 4.5A TO252-3 Product overview: SPD04N50C3ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 4.5A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 4.5A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD04N50C3ATMA1 can be used for catalog matching and distributor lookup.

N-Channel 500V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3-1

N-Channel 500V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3-1

N-Channel 500V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3-1

Manufacturer: Infineon Technologies
Win Source Part Number: 107702-SPD04N50C3ATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3-1
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 200μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 470pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 950 mOhm @ 2.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance