Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD04N50C3ATMA1 SPD04N50C3ATMA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 107702-SPD04N50C3ATM A1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3-1 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 3.9V @ 200μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 470pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 950 mOhm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 107702-SPD04N50C3ATM A1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3-1 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 3.9V @ 200μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 470pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 950 mOhm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD04N50C3ATMA1 - 107702-SPD04N50C3ATMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD04N50C3ATMA1
107702-SPD04N50C3ATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD04N50C3ATMA1 107702-SPD04N50C3ATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 107702-SPD04N50C3ATM A1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3-1 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 3.9V @ 200μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 470pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 950 mOhm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 107702-SPD04N50C3ATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3-1
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 200μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 470pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 950 mOhm @ 2.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
500V 4.5A TO252 MOSFET Transistor
278-SPD04N50C3ATMA1
500V 4.5A TO252 MOSFET Transistor 278-SPD04N50C3ATMA1
MOSFET N-CH 500V 4.5A TO252-3 Product overview: SPD04N50C3ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 4.5A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 4.5A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD04N50C3ATMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 4.5A TO252-3 Product overview: SPD04N50C3ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 4.5A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 4.5A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD04N50C3ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SPD04N50C3ATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPD04N50C3ATMA1DKR-ND
Single FETs, MOSFETs SPD04N50C3ATMA1DKR-ND
N-Channel 500V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3-1

N-Channel 500V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3-1

Buy Now Datasheet
Single FETs, MOSFETs - SPD04N50C3ATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPD04N50C3ATMA1CT-ND
Single FETs, MOSFETs SPD04N50C3ATMA1CT-ND
N-Channel 500V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3-1

N-Channel 500V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3-1

Buy Now Datasheet
Single FETs, MOSFETs - SPD04N50C3ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPD04N50C3ATMA1TR-ND
Single FETs, MOSFETs SPD04N50C3ATMA1TR-ND
N-Channel 500V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3-1

N-Channel 500V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3-1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPD04N50C3ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPD04N50C3ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPD04N50C3ATMA1
MOSFET N-CH 500V 4.5A TO252-3

MOSFET N-CH 500V 4.5A TO252-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET LOW POWER_LEGACY

MOSFET LOW POWER_LEGACY

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 107702-SPD04N50C3ATMA1 278-SPD04N50C3ATMA1 SPD04N50C3ATMA1DKR-ND SPD04N50C3ATMA1 SPD04N50C3ATMA1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD04N50C3ATMA1 500V 4.5A TO252 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
PD 50000 milliwatts 50 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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