Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD03N60C3 SPD03N60C3

Manufacturer: Infineon Technologies
Win Source Part Number: 030751-SPD03N60C3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 3.2A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 135μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Communications & Networking, Consumer Electronics, Power Management

MOSFET N-CH 650V 3.2A DPAK Product overview: SPD03N60C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 3.2A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 3.2A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SPD03N60C3 can be used for catalog matching and distributor lookup.