Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD03N50C3ATMA1 SPD03N50C3ATMA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1000087-SPD03N50C3AT MA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3-1 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 3.2A (Tc) Gate-Source Threshold Voltage: 3.9V @ 135μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1000087-SPD03N50C3AT MA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3-1 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 3.2A (Tc) Gate-Source Threshold Voltage: 3.9V @ 135μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD03N50C3ATMA1 - 1000087-SPD03N50C3ATMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD03N50C3ATMA1
1000087-SPD03N50C3ATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD03N50C3ATMA1 1000087-SPD03N50C3ATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 1000087-SPD03N50C3AT MA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3-1 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 3.2A (Tc) Gate-Source Threshold Voltage: 3.9V @ 135μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1000087-SPD03N50C3ATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3-1
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 3.2A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 135μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SPD03N50C3ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPD03N50C3ATMA1TR-ND
Single FETs, MOSFETs SPD03N50C3ATMA1TR-ND
N-Channel 500V 3.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3-1

N-Channel 500V 3.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3-1

Buy Now Datasheet
Singapore, Singapore
500V 3.2A TO252 MOSFET Transistor
278-SPD03N50C3ATMA1
500V 3.2A TO252 MOSFET Transistor 278-SPD03N50C3ATMA1
MOSFET N-CH 500V 3.2A TO252-3 Product overview: SPD03N50C3ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 3.2A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 3.2A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD03N50C3ATMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 3.2A TO252-3 Product overview: SPD03N50C3ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 3.2A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 3.2A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD03N50C3ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET LOW POWER_LEGACY

MOSFET LOW POWER_LEGACY

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPD03N50C3ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPD03N50C3ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPD03N50C3ATMA1
MOSFET N-CH 500V 3.2A TO252-3

MOSFET N-CH 500V 3.2A TO252-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1000087-SPD03N50C3ATMA1 SPD03N50C3ATMA1TR-ND 278-SPD03N50C3ATMA1 SPD03N50C3ATMA1 SPD03N50C3ATMA1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD03N50C3ATMA1 Single FETs, MOSFETs 500V 3.2A TO252 MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
PD 38000 milliwatts 38 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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