Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB21N50C3 SPB21N50C3

Description
Manufacturer: Infineon Technologies Win Source Part Number: 030745-SPB21N50C3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 208W (Tc) Family Name: SPB21N50C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 560V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 3.9V @ 1mA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 13.1A, 10V Alternative Parts (Cross-Reference): STB21NM50NT4; STB21NM50N; STB18N55M5; STB23NM50N; Introduction Date: March 04, 2003 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 030745-SPB21N50C3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 208W (Tc) Family Name: SPB21N50C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 560V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 3.9V @ 1mA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 13.1A, 10V Alternative Parts (Cross-Reference): STB21NM50NT4; STB21NM50N; STB18N55M5; STB23NM50N; Introduction Date: March 04, 2003 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB21N50C3 - 030745-SPB21N50C3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB21N50C3
030745-SPB21N50C3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB21N50C3 030745-SPB21N50C3
Manufacturer: Infineon Technologies Win Source Part Number: 030745-SPB21N50C3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 208W (Tc) Family Name: SPB21N50C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 560V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 3.9V @ 1mA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 13.1A, 10V Alternative Parts (Cross-Reference): STB21NM50NT4; STB21NM50N; STB18N55M5; STB23NM50N; Introduction Date: March 04, 2003 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 030745-SPB21N50C3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Family Name: SPB21N50C3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 560V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 1mA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 2400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 13.1A, 10V
Alternative Parts (Cross-Reference): STB21NM50NT4; STB21NM50N; STB18N55M5; STB23NM50N;
Introduction Date: March 04, 2003
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
500V 21A MOSFET Transistor
2088-SPB21N50C3
500V 21A MOSFET Transistor 2088-SPB21N50C3
MOSFETs N-Ch 500V 21A D2PAK-2 CoolMOS C3 Product overview: SPB21N50C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 21A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 21A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPB21N50C3 can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 500V 21A D2PAK-2 CoolMOS C3 Product overview: SPB21N50C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 21A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 21A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPB21N50C3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 500V 21A D2PAK-2 CoolMOS C3

MOSFET N-Ch 500V 21A D2PAK-2 CoolMOS C3

Buy Now Datasheet
Transistors - SPB21N50C3 - ODG (Origin Data Global)
Shenzhen, China
Transistors
SPB21N50C3
Transistors SPB21N50C3
TO-263-3 MOSFETs ROHS

TO-263-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 030745-SPB21N50C3 2088-SPB21N50C3 SPB21N50C3 SPB21N50C3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB21N50C3 500V 21A MOSFET Transistor MOSFET Transistors
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 560 volts
PD 208000 milliwatts 208 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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