Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SPB21N10 G

Win Source Part Number: 1278265-SPB21N10 G
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: SIPMOS®
Package: Tape & Reel (TR)
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 44µA
Power Dissipation (Max): 90W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000102171,SPB21N10GXT,SPB21N10 G,SPB21N10G
Base Product Number: SPB21N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

N-Channel 100V 21A (Tc) 90W (Tc) Surface Mount PG-TO263-3-2

MOSFET N-CH 100V 21A TO263-3 Product overview: SPB21N10 G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 21A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 21A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPB21N10 G can be used for catalog matching and distributor lookup.