Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB20N60C3 SPB20N60C3

Manufacturer: Infineon Technologies
Win Source Part Number: 030744-SPB20N60C3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Family Name: SPB20N60C3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 20.7A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 1mA
Max Gate Charge: 114nC @ 10V
Max Input Capacitance: 2400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 13.1A, 10V
Alternative Parts (Cross-Reference): SiHB21N65EF-GE3; STB27NM60ND; STB22NM60;
Introduction Date: July 25, 2002
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited

MOSFETs N-Ch 650V 20.7A D2PAK-2 CoolMOS C3 Product overview: SPB20N60C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 20.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 20.7A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPB20N60C3 can be used for catalog matching and distributor lookup.