Manufacturer: Infineon Technologies
Win Source Part Number: 896980-SPB18P06PGATM
Series: SIPMOS®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: P-Channel 60 V 18.7A (Ta) 81.1W (Ta) Surface Mount PG-TO263-3
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: SPB18P06
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SP000102181, SPB18P06P G-ND, SPB18P06PGINDKR-ND, SPB18P06PGINDKR, SPB18P06PGINTR-ND, SPB18P06PGXT, SPB18P06PGINCT-ND, SPB18P06PGATMA1CT, SPB18P06PGINCT, SPB18P06PGATMA1TR, SPB18P06PGATMA1DKR, SPB18P06P G, SPB18P06PGINTR, SPB18P06PG
P-Channel 60V 18.7A (Ta) 81.1W (Ta) Surface Mount PG-TO263-3
P-Channel 60V 18.7A (Ta) 81.1W (Ta) Surface Mount PG-TO263-3
P-Channel 60V 18.7A (Ta) 81.1W (Ta) Surface Mount PG-TO263-3
MOSFET P-CH 60V 18.7A D2PAK Product overview: SPB18P06PGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 18.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 18.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPB18P06PGATMA1 can be used for catalog matching and distributor lookup.
MOSFET P-CH 60V 18.7A D2PAK
MOSFET P-Ch -60V 18.6A D2PAK-2
MOSFET P-CH 60V 18.7A D2PAK
MOSFET, P CHANNEL, 60V, 18.7A, TO-263; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 896980-SPB18P06PGATMA1 | SPB18P06PGATMA1DKR-ND | 278-SPB18P06PGATMA1 | SPB18P06PGATMA1 | SPB18P06PGATMA1 | SPB18P06PGATMA1 | 47W3753 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB18P06PGATMA1 | Single FETs, MOSFETs | 60V 18.7A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Mosfet, P Channel, 60V, 18.7A, To-263; Channel Type Infineon |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | SOT3; PG-TO263-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3; TO-263 | |
| Transistor Grade / Operating Range | Automotive | ||||||
| MOSFET Operating Mode | Enhancement |