Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SPB16N50C3ATMA1

Description
Win Source Part Number: 1134207-SPB16N50C3AT MA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 560 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Power Dissipation (Max): 160W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SP000014895; SPB16N50C3; ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SPB16N50C3ATMA1TR,SP B16N50C3INTR,SPB16N5 0C3INTR-ND,2156-SPB1 6N50C3ATMA1,SPB16N50 C3ATMA1DKR,SPB16N50C 3INDKR-ND,SP00001489 5,SPB16N50C3INCT,SPB 16N50C3INCT-ND,2156- SPB16N50C3ATMA1-ITTR -ND,SPB16N50C3,SPB16 N50C3ATMA1CT,SPB16N5 0C3XT,SPB16N50C3INDK R,INFINFSPB16N50C3AT MA1,SPB16N50C3-ND Base Product Number: SPB16N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1134207-SPB16N50C3AT MA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 560 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Power Dissipation (Max): 160W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SP000014895; SPB16N50C3; ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SPB16N50C3ATMA1TR,SP B16N50C3INTR,SPB16N5 0C3INTR-ND,2156-SPB1 6N50C3ATMA1,SPB16N50 C3ATMA1DKR,SPB16N50C 3INDKR-ND,SP00001489 5,SPB16N50C3INCT,SPB 16N50C3INCT-ND,2156- SPB16N50C3ATMA1-ITTR -ND,SPB16N50C3,SPB16 N50C3ATMA1CT,SPB16N5 0C3XT,SPB16N50C3INDK R,INFINFSPB16N50C3AT MA1,SPB16N50C3-ND Base Product Number: SPB16N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1134207-SPB16N50C3ATMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1134207-SPB16N50C3ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1134207-SPB16N50C3ATMA1
Win Source Part Number: 1134207-SPB16N50C3AT MA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 560 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Power Dissipation (Max): 160W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SP000014895; SPB16N50C3; ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SPB16N50C3ATMA1TR,SP B16N50C3INTR,SPB16N5 0C3INTR-ND,2156-SPB1 6N50C3ATMA1,SPB16N50 C3ATMA1DKR,SPB16N50C 3INDKR-ND,SP00001489 5,SPB16N50C3INCT,SPB 16N50C3INCT-ND,2156- SPB16N50C3ATMA1-ITTR -ND,SPB16N50C3,SPB16 N50C3ATMA1CT,SPB16N5 0C3XT,SPB16N50C3INDK R,INFINFSPB16N50C3AT MA1,SPB16N50C3-ND Base Product Number: SPB16N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1134207-SPB16N50C3ATMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 560 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Power Dissipation (Max): 160W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SP000014895; SPB16N50C3;
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SPB16N50C3ATMA1TR,SPB16N50C3INTR,SPB16N50C3INTR-ND,2156-SPB16N50C3ATMA1,SPB16N50C3ATMA1DKR,SPB16N50C3INDKR-ND,SP000014895,SPB16N50C3INCT,SPB16N50C3INCT-ND,2156-SPB16N50C3ATMA1-ITTR-ND,SPB16N50C3,SPB16N50C3ATMA1CT,SPB16N50C3XT,SPB16N50C3INDKR,INFINFSPB16N50C3ATMA1,SPB16N50C3-ND
Base Product Number: SPB16N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Singapore
560V 16A MOSFET Transistor
278-SPB16N50C3ATMA1
560V 16A MOSFET Transistor 278-SPB16N50C3ATMA1
MOSFET N-CH 560V 16A TO263-3 Product overview: SPB16N50C3ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 560V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 560V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPB16N50C3ATMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 560V 16A TO263-3 Product overview: SPB16N50C3ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 560V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 560V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPB16N50C3ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SPB16N50C3ATMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SPB16N50C3ATMA1
Single FETs, MOSFETs SPB16N50C3ATMA1
MOSFET N-CH 560V 16A TO263-3

MOSFET N-CH 560V 16A TO263-3

Supplier's Site Datasheet
Single FETs, MOSFETs - SPB16N50C3ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPB16N50C3ATMA1TR-ND
Single FETs, MOSFETs SPB16N50C3ATMA1TR-ND
N-Channel 560V 16A (Tc) 160W (Tc) Surface Mount PG-TO263-3-2

N-Channel 560V 16A (Tc) 160W (Tc) Surface Mount PG-TO263-3-2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPB16N50C3ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPB16N50C3ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPB16N50C3ATMA1
MOSFET N-CH 560V 16A TO263-3

MOSFET N-CH 560V 16A TO263-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1134207-SPB16N50C3ATMA1 278-SPB16N50C3ATMA1 SPB16N50C3ATMA1 SPB16N50C3ATMA1TR-ND SPB16N50C3ATMA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 560V 16A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 160000 milliwatts 160000 milliwatts 160000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 Tape & Reel (TR) TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB 66 nC @ 10 V
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