Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB16N50C3 SPB16N50C3

Description
Manufacturer: Infineon Technologies Win Source Part Number: 133396-SPB16N50C3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 560V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 3.9V @ 675μA Max Gate Charge: 66nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 133396-SPB16N50C3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 560V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 3.9V @ 675μA Max Gate Charge: 66nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB16N50C3 - 133396-SPB16N50C3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB16N50C3
133396-SPB16N50C3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB16N50C3 133396-SPB16N50C3
Manufacturer: Infineon Technologies Win Source Part Number: 133396-SPB16N50C3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 560V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 3.9V @ 675μA Max Gate Charge: 66nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 133396-SPB16N50C3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 560V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 675μA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 1600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 280 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 133396-SPB16N50C3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB16N50C3
Polarity N-Channel; N-Channel
V(BR)DSS 560 volts
PD 160000 milliwatts
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