Infineon Technologies AG 600V 11A MOSFET Transistor SPB11N60S5ATMA1

Description
MOSFET N-CH 600V 11A TO263-3 Product overview: SPB11N60S5ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPB11N60S5ATMA1 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 600V 11A TO263-3 Product overview: SPB11N60S5ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPB11N60S5ATMA1 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
600V 11A MOSFET Transistor
278-SPB11N60S5ATMA1
600V 11A MOSFET Transistor 278-SPB11N60S5ATMA1
MOSFET N-CH 600V 11A TO263-3 Product overview: SPB11N60S5ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPB11N60S5ATMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 11A TO263-3 Product overview: SPB11N60S5ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPB11N60S5ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB11N60S5ATMA1 - 139981-SPB11N60S5ATMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB11N60S5ATMA1
139981-SPB11N60S5ATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB11N60S5ATMA1 139981-SPB11N60S5ATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 139981-SPB11N60S5ATM A1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 5.5V @ 500μA Max Gate Charge: 54nC @ 10V Max Input Capacitance: 1460pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 380 mOhm @ 7A, 10V Alternative Parts (Cross-Reference): SIHB12N60E-GE3; R6010MNJTL; IPB60R380C6; SPB11N60S5ATMA1; Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 139981-SPB11N60S5ATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 500μA
Max Gate Charge: 54nC @ 10V
Max Input Capacitance: 1460pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 380 mOhm @ 7A, 10V
Alternative Parts (Cross-Reference): SIHB12N60E-GE3; R6010MNJTL; IPB60R380C6; SPB11N60S5ATMA1;
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SPB11N60S5ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPB11N60S5ATMA1TR-ND
Single FETs, MOSFETs SPB11N60S5ATMA1TR-ND
N-Channel 600V 11A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2

N-Channel 600V 11A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPB11N60S5ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPB11N60S5ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPB11N60S5ATMA1
MOSFET N-CH 600V 11A TO263-3

MOSFET N-CH 600V 11A TO263-3

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 278-SPB11N60S5ATMA1 139981-SPB11N60S5ATMA1 SPB11N60S5ATMA1TR-ND SPB11N60S5ATMA1
Product Name 600V 11A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB11N60S5ATMA1 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 125000 milliwatts 125000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tape & Reel (TR) TO-263; SOT3; PG-TO263-3-2 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB 54 nC @ 10 V
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6 suppliers