Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB11N60C3 SPB11N60C3

Description
Manufacturer: Infineon Technologies Win Source Part Number: 005203-SPB11N60C3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 3.9V @ 500μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 380 mOhm @ 7A, 10V Alternative Parts (Cross-Reference): STB11NM60T4; FCB11N60; SPB11N60S5E3045; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB11N60C3 - 005203-SPB11N60C3 - Win Source Electronics
    Win Source Electronics
  • Transistors - SPB11N60C3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Transistor - 48588005 - Radwell International
    Radwell International
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 005203-SPB11N60C3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 3.9V @ 500μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 380 mOhm @ 7A, 10V Alternative Parts (Cross-Reference): STB11NM60T4; FCB11N60; SPB11N60S5E3045; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB11N60C3 - 005203-SPB11N60C3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB11N60C3
005203-SPB11N60C3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB11N60C3 005203-SPB11N60C3
Manufacturer: Infineon Technologies Win Source Part Number: 005203-SPB11N60C3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 3.9V @ 500μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 380 mOhm @ 7A, 10V Alternative Parts (Cross-Reference): STB11NM60T4; FCB11N60; SPB11N60S5E3045; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 005203-SPB11N60C3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 500μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 380 mOhm @ 7A, 10V
Alternative Parts (Cross-Reference): STB11NM60T4; FCB11N60; SPB11N60S5E3045;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
600V 11A MOSFET Transistor
2088-SPB11N60C3
600V 11A MOSFET Transistor 2088-SPB11N60C3
MOSFETs N-Ch 600V 11A D2PAK-2 CoolMOS C3 Product overview: SPB11N60C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPB11N60C3 can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 600V 11A D2PAK-2 CoolMOS C3 Product overview: SPB11N60C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPB11N60C3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistors - SPB11N60C3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SPB11N60C3
Transistors SPB11N60C3
MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS C3

MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS C3

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SPB11N60C3
MOSFET SPB11N60C3
MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS C3

MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS C3

Buy Now
Transistor - 48588005 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
48588005
Transistor 48588005
POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 600V, 0.38OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 600V, 0.38OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 005203-SPB11N60C3 2088-SPB11N60C3 SPB11N60C3 SPB11N60C3 48588005
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB11N60C3 600V 11A MOSFET Transistor Transistors MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 650 volts
PD 125000 milliwatts 125 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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