Manufacturer: Infineon Technologies
Win Source Part Number: 1101476-SPB10N10
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 10.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 21μA
Max Gate Charge: 19.4nC @ 10V
Max Input Capacitance: 426pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 170 mOhm @ 7.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient
N-Channel 100V 10.3A (Tc) 50W (Tc) Surface Mount PG-TO263-3-2
MOSFET N-CH 100V 10.3A TO263-3
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1101476-SPB10N10 | SPB10N10-ND | SPB10N10 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB10N10 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 100 volts | ||
| PD | 50000 milliwatts |
