Infineon Technologies AG Single FETs, MOSFETs SPB10N10

Description
N-Channel 100V 10.3A (Tc) 50W (Tc) Surface Mount PG-TO263-3-2
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Description
N-Channel 100V 10.3A (Tc) 50W (Tc) Surface Mount PG-TO263-3-2
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - SPB10N10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPB10N10-ND
Single FETs, MOSFETs SPB10N10-ND
N-Channel 100V 10.3A (Tc) 50W (Tc) Surface Mount PG-TO263-3-2

N-Channel 100V 10.3A (Tc) 50W (Tc) Surface Mount PG-TO263-3-2

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB10N10 - 1101476-SPB10N10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB10N10
1101476-SPB10N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB10N10 1101476-SPB10N10
Manufacturer: Infineon Technologies Win Source Part Number: 1101476-SPB10N10 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 10.3A (Tc) Gate-Source Threshold Voltage: 4V @ 21μA Max Gate Charge: 19.4nC @ 10V Max Input Capacitance: 426pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 170 mOhm @ 7.8A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1101476-SPB10N10
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 10.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 21μA
Max Gate Charge: 19.4nC @ 10V
Max Input Capacitance: 426pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 170 mOhm @ 7.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPB10N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPB10N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPB10N10
MOSFET N-CH 100V 10.3A TO263-3

MOSFET N-CH 100V 10.3A TO263-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SPB10N10-ND 1101476-SPB10N10 SPB10N10
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPB10N10 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; PG-TO263-3-2 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 100 volts
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