Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SPB100N08S2L-07

Description
Win Source Part Number: 963727-SPB100N08S2L- 07 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel (TR) Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 68A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 300W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7130 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): SPB100N08S2L-07SPB10 0N08S2L07; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000013716,SPB100N0 8S2L07T Base Product Number: SPB100N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V RoHS Status: RoHS non-compliant
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Description
Win Source Part Number: 963727-SPB100N08S2L- 07 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel (TR) Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 68A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 300W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7130 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): SPB100N08S2L-07SPB10 0N08S2L07; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000013716,SPB100N0 8S2L07T Base Product Number: SPB100N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V RoHS Status: RoHS non-compliant
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 963727-SPB100N08S2L-07 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
963727-SPB100N08S2L-07
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 963727-SPB100N08S2L-07
Win Source Part Number: 963727-SPB100N08S2L- 07 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel (TR) Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 68A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 300W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7130 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): SPB100N08S2L-07SPB10 0N08S2L07; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000013716,SPB100N0 8S2L07T Base Product Number: SPB100N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V RoHS Status: RoHS non-compliant

Win Source Part Number: 963727-SPB100N08S2L-07
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
Package: Tape & Reel (TR)
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 68A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7130 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SPB100N08S2L-07SPB100N08S2L07;
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000013716,SPB100N08S2L07T
Base Product Number: SPB100N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: RoHS non-compliant

Buy Now Datasheet
Singapore, Singapore
75V 100A MOSFET Transistor
278-SPB100N08S2L-07
75V 100A MOSFET Transistor 278-SPB100N08S2L-07
MOSFET N-CH 75V 100A TO263-3 Product overview: SPB100N08S2L-07 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPB100N08S2L-07 can be used for catalog matching and distributor lookup.

MOSFET N-CH 75V 100A TO263-3 Product overview: SPB100N08S2L-07 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPB100N08S2L-07 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SPB100N08S2L-07-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPB100N08S2L-07-ND
Single FETs, MOSFETs SPB100N08S2L-07-ND
N-Channel 75V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2

N-Channel 75V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPB100N08S2L-07 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPB100N08S2L-07
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPB100N08S2L-07
MOSFET N-CH 75V 100A TO263-3

MOSFET N-CH 75V 100A TO263-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 963727-SPB100N08S2L-07 278-SPB100N08S2L-07 SPB100N08S2L-07-ND SPB100N08S2L-07
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 75V 100A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
PD 300000 milliwatts 300000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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