Infineon Technologies AG Single FETs, MOSFETs SPB04N60S5ATMA1

N-Channel 600V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO263-3-2

MOSFET N-CH 600V 4.5A TO263-3 Product overview: SPB04N60S5ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPB04N60S5ATMA1 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 795283-SPB04N60S5ATMA1
Series: CoolMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Part Status: Obsolete(EOL)
Family Name: SPB04N60S5ATMA1
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: PG-TO263-3-2
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5.5V @ 200μA
Gate Charge (Qg) (Maximum) @ Vgs: 22.9nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 580pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 50W (Tc)
Rds On (Maximum) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
Alternative Parts (Cross-Reference): STB9NK60ZD; STB9NK60ZFDT4; STB9NK60ZFD; STB9NK60ZDT4;
Introduction Date: January 01, 1999
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance