Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA17N80C3 SPA17N80C3

Description
Manufacturer: Infineon Technologies Win Source Part Number: 088432-SPA17N80C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Tc) Family Name: SPA17N80C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-3 Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 3.9V @ 1mA Max Gate Charge: 177nC @ 10V Max Input Capacitance: 2320pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 290 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): FCPF290N80; TK17A80W,S4X; FCPF400N80Z; STF11NM80(045Y) ; Introduction Date: July 25, 2002 ECCN: EAR99 Country of Origin: Austria, China, Germany, Malaysia, Mexico, Philippines, Taiwan, Thailand Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 088432-SPA17N80C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Tc) Family Name: SPA17N80C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-3 Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 3.9V @ 1mA Max Gate Charge: 177nC @ 10V Max Input Capacitance: 2320pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 290 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): FCPF290N80; TK17A80W,S4X; FCPF400N80Z; STF11NM80(045Y) ; Introduction Date: July 25, 2002 ECCN: EAR99 Country of Origin: Austria, China, Germany, Malaysia, Mexico, Philippines, Taiwan, Thailand Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA17N80C3 - 088432-SPA17N80C3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA17N80C3
088432-SPA17N80C3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA17N80C3 088432-SPA17N80C3
Manufacturer: Infineon Technologies Win Source Part Number: 088432-SPA17N80C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Tc) Family Name: SPA17N80C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-3 Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 3.9V @ 1mA Max Gate Charge: 177nC @ 10V Max Input Capacitance: 2320pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 290 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): FCPF290N80; TK17A80W,S4X; FCPF400N80Z; STF11NM80(045Y) ; Introduction Date: July 25, 2002 ECCN: EAR99 Country of Origin: Austria, China, Germany, Malaysia, Mexico, Philippines, Taiwan, Thailand Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 088432-SPA17N80C3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42W (Tc)
Family Name: SPA17N80C3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO220-3
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 1mA
Max Gate Charge: 177nC @ 10V
Max Input Capacitance: 2320pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 290 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): FCPF290N80; TK17A80W,S4X; FCPF400N80Z; STF11NM80(045Y) ;
Introduction Date: July 25, 2002
ECCN: EAR99
Country of Origin: Austria, China, Germany, Malaysia, Mexico, Philippines, Taiwan, Thailand
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Transistor - 38342484 - Radwell International
Willingboro, NJ, United States
Transistor
38342484
Transistor 38342484
(PRICE/EA) MOSFET, N CHANNEL, 800V, 17A, TO-220-3; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:17A; DRAIN SOURCE VOLTAGE VDS:800V; ON R. FREE 2 YEAR RADWELL WARRANTY

(PRICE/EA) MOSFET, N CHANNEL, 800V, 17A, TO-220-3; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:17A; DRAIN SOURCE VOLTAGE VDS:800V; ON R. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
MOSFETs - 7533153P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7533153P
MOSFETs 7533153P
MOSFET N-Ch 800V 17A CoolMOS TO220FP

MOSFET N-Ch 800V 17A CoolMOS TO220FP

Supplier's Site
MOSFETs - 7533153 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7533153
MOSFETs 7533153
MOSFET N-Ch 800V 17A CoolMOS TO220FP

MOSFET N-Ch 800V 17A CoolMOS TO220FP

Supplier's Site
MOSFETs - 9110709 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9110709
MOSFETs 9110709
MOSFET N-Ch 800V 17A CoolMOS TO220FP

MOSFET N-Ch 800V 17A CoolMOS TO220FP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 800V 17A TO220FP-3 CoolMOS C3

MOSFET N-Ch 800V 17A TO220FP-3 CoolMOS C3

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Radwell International RS Components, Ltd. RS Components, Ltd. VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 088432-SPA17N80C3 38342484 7533153P 7533153 SPA17N80C3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA17N80C3 Transistor MOSFETs MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 800 volts
PD 42000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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