Manufacturer: Infineon Technologies
Win Source Part Number: 088432-SPA17N80C3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42W (Tc)
Family Name: SPA17N80C3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO220-3
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 1mA
Max Gate Charge: 177nC @ 10V
Max Input Capacitance: 2320pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 290 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): FCPF290N80; TK17A80W,S4X; FCPF400N80Z; STF11NM80(045Y) ;
Introduction Date: July 25, 2002
ECCN: EAR99
Country of Origin: Austria, China, Germany, Malaysia, Mexico, Philippines, Taiwan, Thailand
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
(PRICE/EA) MOSFET, N CHANNEL, 800V, 17A, TO-220-3; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:17A; DRAIN SOURCE VOLTAGE VDS:800V; ON R. FREE 2 YEAR RADWELL WARRANTY
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| Win Source Electronics | Radwell International | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 088432-SPA17N80C3 | 38342484 | 7533153P | 7533153 | SPA17N80C3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA17N80C3 | Transistor | MOSFETs | MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 800 volts | ||||
| PD | 42000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |