Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA15N60CFD SPA15N60CFD

Manufacturer: Infineon Technologies
Win Source Part Number: 065912-SPA15N60CFD
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 34W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 13.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 750μA
Max Gate Charge: 84nC @ 10V
Max Input Capacitance: 1820pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 330 mOhm @ 9.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

MOSFETs N-Ch 600V 13.4A TO220FP CoolMOS CFD Product overview: SPA15N60CFD from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 13.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 13.4A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPA15N60CFD can be used for catalog matching and distributor lookup.