Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA15N60CFD SPA15N60CFD

Description
Manufacturer: Infineon Technologies Win Source Part Number: 065912-SPA15N60CFD Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 34W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 13.4A (Tc) Gate-Source Threshold Voltage: 5V @ 750μA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 1820pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 330 mOhm @ 9.4A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 065912-SPA15N60CFD Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 34W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 13.4A (Tc) Gate-Source Threshold Voltage: 5V @ 750μA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 1820pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 330 mOhm @ 9.4A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA15N60CFD - 065912-SPA15N60CFD - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA15N60CFD
065912-SPA15N60CFD
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA15N60CFD 065912-SPA15N60CFD
Manufacturer: Infineon Technologies Win Source Part Number: 065912-SPA15N60CFD Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 34W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 13.4A (Tc) Gate-Source Threshold Voltage: 5V @ 750μA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 1820pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 330 mOhm @ 9.4A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 065912-SPA15N60CFD
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 34W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 13.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 750μA
Max Gate Charge: 84nC @ 10V
Max Input Capacitance: 1820pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 330 mOhm @ 9.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 13.4A TO220FP CoolMOS CFD

MOSFET N-Ch 600V 13.4A TO220FP CoolMOS CFD

Buy Now Datasheet

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 065912-SPA15N60CFD SPA15N60CFD
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA15N60CFD MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 650 volts
PD 34000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

N-channel TrenchMOS standard level FET - BUK7635-55A,118 - Nexperia B.V.
Specs
Package Type SOT404
Transistor Grade / Operating Range Automotive
View Details
6 suppliers
MOSFETs - 1219977 - RS Components, Ltd.
RS Components, Ltd.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
Package Type SOT23; Sot-23
View Details
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY - ALD810029SCLI - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10.6 volts
View Details