Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SPA11N60C3IN

Win Source Part Number: 1278355-SPA11N60C3IN
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Power Dissipation (Max): 33W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-3-31
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000013664,SPA11N60C3,SPA11N60C3INR,SPA11N60C3X,SPA11N60C3XTIN,SPA11N60C3XTIN
Base Product Number: SPA11N
Drive Voltage (Max Rds On, Min Rds On): 10V

MOSFET N-CH 650V 11A TO220-3-31 Product overview: SPA11N60C3IN from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 11A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 11A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPA11N60C3IN can be used for catalog matching and distributor lookup.

N-Channel 650V 11A (Tc) 33W (Tc) Through Hole PG-TO220-3-31