Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA08N80C3 SPA08N80C3

Description
Manufacturer: Infineon Technologies Win Source Part Number: 065907-SPA08N80C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 3.9V @ 470μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1100pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 650 mOhm @ 5.1A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 065907-SPA08N80C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 3.9V @ 470μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1100pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 650 mOhm @ 5.1A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA08N80C3 - 065907-SPA08N80C3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA08N80C3
065907-SPA08N80C3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA08N80C3 065907-SPA08N80C3
Manufacturer: Infineon Technologies Win Source Part Number: 065907-SPA08N80C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 3.9V @ 470μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1100pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 650 mOhm @ 5.1A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 065907-SPA08N80C3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 470μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1100pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 650 mOhm @ 5.1A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
800V 8A MOSFET Transistor
2088-SPA08N80C3
800V 8A MOSFET Transistor 2088-SPA08N80C3
MOSFETs N-Ch 800V 8A TO220FP-3 CoolMOS C3 Product overview: SPA08N80C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 8A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPA08N80C3 can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 800V 8A TO220FP-3 CoolMOS C3 Product overview: SPA08N80C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 8A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPA08N80C3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 800V 8A TO220FP-3 CoolMOS C3

MOSFET N-Ch 800V 8A TO220FP-3 CoolMOS C3

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 065907-SPA08N80C3 2088-SPA08N80C3 SPA08N80C3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA08N80C3 800V 8A MOSFET Transistor MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 800 volts
PD 40000 milliwatts 40 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data

Similar Products

Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R140M1H - AIMDQ75R140M1H - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details
CSD17571Q2 30V N-Channel NexFET Power MOSFETs, CSD17571Q2 - CSD17571Q2 - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 30 volts
rDS(on) 0.0290 ohms
View Details
8 suppliers
MOSFETs - 2222852 - RS Components, Ltd.
RS Components, Ltd.
Specs
Package Type UDFN-2020
View Details