Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA08N50C3 SPA08N50C3

Manufacturer: Infineon Technologies Win Source Part Number: 212013-SPA08N50C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 32W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 560V Continuous Drain Current at 25°C: 7.6A (Tc) Gate-Source Threshold Voltage: 3.9V @ 350μA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 750pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 4.6A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited