Manufacturer: Infineon Technologies
Win Source Part Number: 065905-SPA07N60CFD
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 32W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 6.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 300μA
Max Gate Charge: 47nC @ 10V
Max Input Capacitance: 790pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 700 mOhm @ 4.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
MOSFET N-CH 650V 6.6A TO220-FP Product overview: SPA07N60CFD from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 6.6A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 6.6A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SPA07N60CFD can be used for catalog matching and distributor lookup.
MOSFET, N CHANNEL, 650V, 6.6A, TO-220FP-3; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:6.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-Ch 650V 6.6A TO220FP CoolMOS CFD
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 065905-SPA07N60CFD | 285-SPA07N60CFD | 33P8194 | SPA07N60CFD |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA07N60CFD | 650V 6.6A TO220 MOSFET Transistor | Mosfet, N Channel, 650V, 6.6A, To-220Fp-3; Channel Type Infineon | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |
| V(BR)DSS | 650 volts | |||
| PD | 32000 milliwatts | 32000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
