Infineon Technologies AG MOSFET SP000928262

Description
MOSFET N-Ch 650V 8.7A DPAK-2
Description
MOSFET N-Ch 650V 8.7A DPAK-2
Datasheet
Datasheet Summary
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The IPD65R420CFDA is a 650V N-channel MOSFET designed for automotive switching applications, featuring a DPAK package with a thermal resistance of 1.5 K/W from junction to case and 62 K/W from junction to ambient on a 6 cm² PCB. It has a maximum continuous drain current of 8.7 A at 25°C case temperature and a drain-source on-state resistance of 0.42 Ω maximum. The device includes an ultra-fast body diode with a reverse recovery charge of 0.7 µC and peak reverse current of 8.8 A, and is qualified to AEC-Q101. The package is RoHS compliant, lead-free, and halogen-free.

Datasheet Summary
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The IPD65R420CFDA is a 650V N-channel MOSFET designed for automotive switching applications, featuring a DPAK package with a thermal resistance of 1.5 K/W from junction to case and 62 K/W from junction to ambient on a 6 cm² PCB. It has a maximum continuous drain current of 8.7 A at 25°C case temperature and a drain-source on-state resistance of 0.42 Ω maximum. The device includes an ultra-fast body diode with a reverse recovery charge of 0.7 µC and peak reverse current of 8.8 A, and is qualified to AEC-Q101. The package is RoHS compliant, lead-free, and halogen-free.

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Sheung Wan, Hong Kong
MOSFET N-Ch 650V 8.7A DPAK-2

MOSFET N-Ch 650V 8.7A DPAK-2

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SP000928262
Product Name MOSFET
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