Infineon Technologies AG MOSFET SP000216320

The SPA11N80C3 is an N-channel MOSFET designed for high-voltage switching applications, featuring an 800 V drain-source breakdown voltage and a continuous drain current of 11 A at 25°C. It is housed in a PG-TO220-3 package with dimensions of 15.67-16.15 mm in length, 10.00-10.65 mm in width, and 28.70-29.75 mm in height. The device has a maximum drain-source on-state resistance of 0.45 Ω at 25°C, a gate charge of 64 nC, and is rated for 470 mJ single-pulse avalanche energy. It is fully isolated with 2500 VAC insulation for one minute, qualified to JEDEC standards, and RoHS compliant. Thermal resistance from junction to case is 3.7 K/W. The part meets AEC-Q200 qualifications for automotive applications.