NPN silicon high-voltage transistor in SOT23 package, rated for 300 V collector-emitter voltage and 500 mA collector current, with a total power dissipation of 360 mW at 74 °C and a junction temperature up to 150 °C. It meets AEC-Q101 qualification and is RoHS compliant.
Bipolar Transistors - BJT NPN 300 V 500 mA
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | SMBTA 42 E6327 |
| Product Name | Bipolar Transistors - BJT |
