Infineon Technologies AG Bipolar Transistors - BJT SMBTA 06UPN E6327

Description
Bipolar Transistors - BJT NPN / PNP Silicon AF TRANSISTOR ARRAY
Description
Bipolar Transistors - BJT NPN / PNP Silicon AF TRANSISTOR ARRAY
Datasheet
Datasheet Summary
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The SMBTA06UPN is a silicon NPN/PNP transistor array in an SC74 package, designed for general-purpose switching applications. Each device contains two internally isolated transistors with a collector-emitter voltage rating of 80 V, a collector current rating of 500 mA, and a total power dissipation of 330 mW. The junction temperature range is -65 °C to 150 °C, and the package is Pb-free and RoHS compliant. The part is qualified to AEC-Q101 standards. Thermal resistance from junction to soldering point is ≤105 K/W. The SC74 package has a pin configuration of E-B-C-E-B-C and measures 2.9 mm × 1.9 mm with a height of 1.0 mm maximum.

Datasheet Summary
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The SMBTA06UPN is a silicon NPN/PNP transistor array in an SC74 package, designed for general-purpose switching applications. Each device contains two internally isolated transistors with a collector-emitter voltage rating of 80 V, a collector current rating of 500 mA, and a total power dissipation of 330 mW. The junction temperature range is -65 °C to 150 °C, and the package is Pb-free and RoHS compliant. The part is qualified to AEC-Q101 standards. Thermal resistance from junction to soldering point is ≤105 K/W. The SC74 package has a pin configuration of E-B-C-E-B-C and measures 2.9 mm × 1.9 mm with a height of 1.0 mm maximum.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
SMBTA 06UPN E6327
Bipolar Transistors - BJT SMBTA 06UPN E6327
Bipolar Transistors - BJT NPN / PNP Silicon AF TRANSISTOR ARRAY

Bipolar Transistors - BJT NPN / PNP Silicon AF TRANSISTOR ARRAY

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number SMBTA 06UPN E6327
Product Name Bipolar Transistors - BJT
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