Infineon Technologies AG Bipolar Transistor, Fast Switching Transistor SMBT3906S

SMBT3906S is a PNP silicon switching transistor in a SOT363 package, designed for surface-mount applications with dual isolated transistors in one package. It has a collector-emitter voltage rating of 40 V, a collector current of 200 mA, and a total power dissipation of 250 mW at a case temperature of 115°C. The junction operating temperature is 150°C. It meets AEC-Q101 automotive qualification standards and is RoHS compliant. The thermal resistance from junction to solder point is ≤140 K/W. DC current gain ranges from 30 to 300 depending on collector current, with collector-emitter saturation voltage up to 0.4 V at 50 mA collector current and 5 mA base current.