Infineon Technologies AG Bipolar Transistor, Fast Switching Transistor SMBT3904UPN

Description
NPN / PNP Silicon Switching Transistor Array Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101
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Description
NPN / PNP Silicon Switching Transistor Array Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101
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Datasheet
Datasheet Summary
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The SMBT3904UPN is a paired NPN and PNP silicon switching transistor in a SC74 package, designed for high-current gain and low saturation voltage applications. It features galvanic isolation between the two transistors, a collector-emitter voltage rating of 40 V, and a maximum collector current of 200 mA. Total power dissipation is rated at 330 mW at a case temperature of 105 °C, with a junction temperature limit of 150 °C. The device is RoHS compliant and qualified to AEC-Q101 standards.

Datasheet Summary
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The SMBT3904UPN is a paired NPN and PNP silicon switching transistor in a SC74 package, designed for high-current gain and low saturation voltage applications. It features galvanic isolation between the two transistors, a collector-emitter voltage rating of 40 V, and a maximum collector current of 200 mA. Total power dissipation is rated at 330 mW at a case temperature of 105 °C, with a junction temperature limit of 150 °C. The device is RoHS compliant and qualified to AEC-Q101 standards.

Suppliers

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Supplier Links
Bipolar Transistor, Fast Switching Transistor - SMBT3904UPN - Infineon Technologies AG
Neubiberg, Germany
Bipolar Transistor, Fast Switching Transistor
SMBT3904UPN
Bipolar Transistor, Fast Switching Transistor SMBT3904UPN
NPN / PNP Silicon Switching Transistor Array Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101

NPN / PNP Silicon Switching Transistor Array


Summary of Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Two (galvanic) internal isolated NPN / PNP transistor in one package
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number SMBT3904UPN
Product Name Bipolar Transistor, Fast Switching Transistor
Polarity NPN/PNP (Dual); NPN; PNP
Package Type SC74
Packing Method Tape Reel; TAPE & REEL
IC(max) 200 milliamps
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