Infineon Technologies AG Bipolar Transistors - BJT SMBT 3906U E6327

Description
Bipolar Transistors - BJT PNP Silicon Switch TRANSISTOR
Description
Bipolar Transistors - BJT PNP Silicon Switch TRANSISTOR
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The SMBT3906U is a PNP silicon switching transistor in an SC74 package, designed for general-purpose switching applications. It features a collector-emitter voltage rating of 40 V, a collector current of 200 mA, and a total power dissipation of 330 mW at a case temperature of 107°C. The transistor has a DC current gain (hFE) ranging from 30 to 300 depending on collector current, with a collector-emitter saturation voltage of up to 0.4 V at 50 mA collector current and 5 mA base current. It meets AEC-Q101 qualification and is RoHS compliant. The junction temperature range is -65°C to 150°C, and the transition frequency is 250 MHz.

Datasheet Summary
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The SMBT3906U is a PNP silicon switching transistor in an SC74 package, designed for general-purpose switching applications. It features a collector-emitter voltage rating of 40 V, a collector current of 200 mA, and a total power dissipation of 330 mW at a case temperature of 107°C. The transistor has a DC current gain (hFE) ranging from 30 to 300 depending on collector current, with a collector-emitter saturation voltage of up to 0.4 V at 50 mA collector current and 5 mA base current. It meets AEC-Q101 qualification and is RoHS compliant. The junction temperature range is -65°C to 150°C, and the transition frequency is 250 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
SMBT 3906U E6327
Bipolar Transistors - BJT SMBT 3906U E6327
Bipolar Transistors - BJT PNP Silicon Switch TRANSISTOR

Bipolar Transistors - BJT PNP Silicon Switch TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number SMBT 3906U E6327
Product Name Bipolar Transistors - BJT
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