Infineon Technologies AG Bipolar Transistors - BJT SMBT 3904 E6433

Description
Bipolar Transistors - BJT NPN Silicon Switch TRANSISTOR
Description
Bipolar Transistors - BJT NPN Silicon Switch TRANSISTOR
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NPN silicon switching transistor in SOT23 package, rated for 40 V collector-emitter voltage, 200 mA collector current, and 330 mW power dissipation at temperatures up to 71°C, with a maximum junction temperature of 150°C and thermal resistance from junction to soldering point of no more than 240 K/W. Features DC current gain between 30 and 300 depending on collector current, collector-emitter saturation voltage up to 0.3 V at 50 mA, and transition frequency of 300 MHz. RoHS compliant and qualified to AEC-Q101.

Datasheet Summary
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NPN silicon switching transistor in SOT23 package, rated for 40 V collector-emitter voltage, 200 mA collector current, and 330 mW power dissipation at temperatures up to 71°C, with a maximum junction temperature of 150°C and thermal resistance from junction to soldering point of no more than 240 K/W. Features DC current gain between 30 and 300 depending on collector current, collector-emitter saturation voltage up to 0.3 V at 50 mA, and transition frequency of 300 MHz. RoHS compliant and qualified to AEC-Q101.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
SMBT 3904 E6433
Bipolar Transistors - BJT SMBT 3904 E6433
Bipolar Transistors - BJT NPN Silicon Switch TRANSISTOR

Bipolar Transistors - BJT NPN Silicon Switch TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number SMBT 3904 E6433
Product Name Bipolar Transistors - BJT
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