Infineon Technologies AG Bipolar Transistors - BJT SMBT 2222A E6327

Description
Bipolar Transistors - BJT AF GP BJT NPN 40V 0.6A
Description
Bipolar Transistors - BJT AF GP BJT NPN 40V 0.6A
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SMBT2222A/MMBT2222A is an NPN silicon switching transistor in an SOT23 package, rated for a collector-emitter voltage of 40 V, a collector current of 600 mA, and a total power dissipation of 330 mW at 77 °C. The junction temperature ranges from -65 °C to 150 °C, and the device meets AEC-Q101 qualification and is RoHS compliant.

Datasheet Summary
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SMBT2222A/MMBT2222A is an NPN silicon switching transistor in an SOT23 package, rated for a collector-emitter voltage of 40 V, a collector current of 600 mA, and a total power dissipation of 330 mW at 77 °C. The junction temperature ranges from -65 °C to 150 °C, and the device meets AEC-Q101 qualification and is RoHS compliant.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
SMBT 2222A E6327
Bipolar Transistors - BJT SMBT 2222A E6327
Bipolar Transistors - BJT AF GP BJT NPN 40V 0.6A

Bipolar Transistors - BJT AF GP BJT NPN 40V 0.6A

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number SMBT 2222A E6327
Product Name Bipolar Transistors - BJT
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