The SI4410DYPbF is an N-channel MOSFET designed for low-voltage and battery-powered power conversion applications. It is packaged in an SO-8 surface-mount package measuring 8.1 mm by 7.9 mm, with a thermal resistance of 50 °C/W and power dissipation capability of 2.5 W at 25°C. The device has a drain-source voltage rating of 30 V, continuous drain current of 10 A at 25°C, and a maximum on-resistance of 0.0135 Ω at 10 V gate drive. It supports logic-level gate drive and complies with EIA-481 and EIA-541 tape and reel standards. The junction and storage temperature range is -55 to +150 °C.
N-Channel 30V 10A (Ta) 2.5W (Ta) Surface Mount 8-SO
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | SI4410DY-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
