The S29GL512P12FFIV20 is a 512 Mbit NOR Flash memory device from Quarktwin Technology Ltd., utilizing 90 nm MirrorBit process technology. It operates with a single 3V supply (2.7-3.6 V) and features fast access times, including a page access time of 25 ns and a random access time of 90 ns. The device supports a write buffer that allows programming of up to 32 words (64 bytes) in a single operation, enhancing programming efficiency for embedded applications. This memory device includes a uniform sector architecture with 512 sectors, each 64 Kwords (128 Kbytes), and offers a typical endurance of 100,000 erase cycles per sector. It also features a secured silicon sector for permanent identification and advanced sector protection methods. The S29GL512P supports various power-saving modes, including standby and automatic sleep modes, with typical current consumption values of 30 mA during random access read and 1 µA in standby mode. The device is available in multiple package options, including a 64-ball fortified BGA and a 56-pin TSOP, making it suitable for a range of embedded applications that require high density, performance, and low power consumption.
FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 120ns 64-FBGA (13x11)
IC FLASH 512MBIT PARALLEL 64FBGA Product overview: S29GL512P12FFIV20 from Infineon Technologies is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-S29GL512P12FFIV2
FLASH - NOR Memory IC 512Mbit Parallel 120 ns 64-FBGA (13x11)
| DigiKey | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 448-S29GL512P12FFIV20-ND | 774-S29GL512P12FFIV20 | S29GL512P12FFIV20 |
| Product Name | Memory | Memory IC and Storage Component | Memory |
| Memory Category | Flash | Flash; Non-Volatile | Flash; FLASH |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
| Density | 512000 kbits | 512000 kbits | |
| Package Type | 64-LBGA | BGA; Tray | BGA; 64-LBGA |
