Infineon Technologies AG Memory S29GL256P11FAIV20

The S29GL256P11FAIV20 is a 256 Mbit NOR Flash memory device from Quarktwin Technology Ltd., utilizing 90 nm MirrorBit process technology. It operates with a single 3V supply (2.7-3.6 V) and features a fast page access time of 25 ns, with random access times as low as 90 ns. The device includes a write buffer capable of programming up to 32 words (64 bytes) in a single operation, enhancing programming efficiency for embedded applications. This memory device supports a uniform sector architecture with 256 sectors, each 64 Kwords (128 Kbytes) in size, and offers a typical endurance of 100,000 erase cycles per sector. It also includes advanced features such as a secured silicon sector for permanent identification, suspend and resume commands for program and erase operations, and various protection methods to secure data integrity. Typical current consumption is 30 mA during random access read and as low as 1 µA in standby mode. The device is available in a 64-ball Fortified BGA package, making it suitable for space-constrained applications. Overall, the S29GL256P11FAIV20 is designed for high-density, high-performance embedded systems requiring reliable and efficient memory solutions.