Infineon Technologies AG Memory S29CD032J0RFAM010

Description
FLASH - NOR Memory IC 32Mb (1M x 32) Parallel 75MHz 54ns 80-FBGA (13x11)
  • Memory - S29CD032J0RFAM010-ND - DigiKey
    DigiKey
  • Memory - S29CD032J0RFAM010 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - S29CD032J0RFAM010 - Lingto Electronic Limited
    Lingto Electronic Limited
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 32Mb (1M x 32) Parallel 75MHz 54ns 80-FBGA (13x11)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S29CD032J0RFAM010-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
S29CD032J0RFAM010-ND
Memory S29CD032J0RFAM010-ND
FLASH - NOR Memory IC 32Mb (1M x 32) Parallel 75MHz 54ns 80-FBGA (13x11)

FLASH - NOR Memory IC 32Mb (1M x 32) Parallel 75MHz 54ns 80-FBGA (13x11)

Buy Now Datasheet
Memory - S29CD032J0RFAM010 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
S29CD032J0RFAM010
Memory S29CD032J0RFAM010
FLASH - NOR Memory IC 32Mbit Parallel 75 MHz 54 ns 80-FBGA (13x11)

FLASH - NOR Memory IC 32Mbit Parallel 75 MHz 54 ns 80-FBGA (13x11)

Buy Now Datasheet
Memory - S29CD032J0RFAM010 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
S29CD032J0RFAM010
Memory S29CD032J0RFAM010
IC FLASH 32MBIT PARALLEL 80FBGA

IC FLASH 32MBIT PARALLEL 80FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number S29CD032J0RFAM010-ND S29CD032J0RFAM010 S29CD032J0RFAM010
Product Name Memory Memory Memory
Memory Category Flash Flash; FLASH Flash; Flash
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Density 32000 kbits 32000 kbits 32000 kbits
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